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IEICE Trans

Philippe GAUBERT

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering
Dae-Hee HAN Shun-ichiro OHMI Tomoyuki SUWA Philippe GAUBERT Tadahiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5  pp. 413-418
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughness, HfON gate insulator, ECR plasma sputtering, plasma oxidation, 1/f noise, TDDB, 
 Summary | Full Text:PDF