Keyword : ECR plasma sputtering


Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient
Sohya KUDOH Shun-ichiro OHMI 
Publication:   
Publication Date: 2018/05/01
Vol. E101-C  No. 5 ; pp. 328-333
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Hf-based MONOS structureECR plasma sputteringenduranceatomically flat Si surfaceAr/H2 ambient
 Summary | Full Text:PDF

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering
Dae-Hee HAN Shun-ichiro OHMI Tomoyuki SUWA Philippe GAUBERT Tadahiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5 ; pp. 413-418
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughnessHfON gate insulatorECR plasma sputteringplasma oxidation1/f noiseTDDB
 Summary | Full Text:PDF

Flattening Process of Si Surface below 1000 Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation
Dae-Hee HAN Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 669-673
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
surface roughnessHfON gate insulatorECR plasma sputteringplasma oxidationEOT
 Summary | Full Text:PDF