Flattening Process of Si Surface below 1000 Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation Dae-Hee HANShun-ichiro OHMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-CNo. 5 ;
pp. 669-673 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: surface roughness, HfON gate insulator, ECR plasma sputtering, plasma oxidation, EOT,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2001/09/01 Vol. E84-CNo. 9 ;
pp. 1202-1206 Type of Manuscript: Special Section PAPER (Special Issue on Selected Papers from the 5th Asian Symposium on Information Storage Technology) Category: Keyword: magnetic tunnel junctions, tunneling magnetoresistance, plasma oxidation, inverse TMR,
Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation