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Vol.E77-C No.2
pp.92-97
Special SectionPAPER
Process Simulation
Accurate Simulation of Pattern Transfer Processes Using Minkowski Operations
Ernst STRASSER, Gerhard SCHROM, Karl WIMMER, Siegfried SELBERHERR, |
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Summary | Full Text:PDF | |
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Vol.E77-C No.2
pp.98-105
Special SectionPAPER
Process Simulation
Material Representations and Algorithms for Nanometer Lithography Simulation
Edward W. SCHECKLER, Taro OGAWA, Shoji SHUKURI, Eiji TAKEDA, |
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Summary | Full Text:PDF | |
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Vol.E77-C No.2
pp.106-111
Special SectionPAPER
Process Simulation
Evaluation of Two-Dimensional Transient Enhanced Diffusion of Phosphorus during Shallow Junction Formation
Hisako SATO, Katsumi TSUNENO, Hiroo MASUDA, |
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Summary | Full Text:PDF | |
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Vol.E77-C No.2
pp.112-117
Special SectionPAPER
Process Simulation
Dynamic-Clustering and Grain-Growth Kinetics Effects on Dopant Diffusion in Polysilicon
Masami HANE, Shinya HASEGAWA, |
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Summary | Full Text:PDF | |
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Vol.E77-C No.2
pp.118-123
Special SectionPAPER
Process Simulation
Monte Carlo Simulation of Ion Implantation for Three-Dimensional Structures Using an Octree
Hannes STIPPEL, Siegfried SELBERHERR, |
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Summary | Full Text:PDF | |
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Vol.E77-C No.2
pp.124-128
Special SectionPAPER
Process Simulation
Mechanical Stress Analysis of Trench Isolation Using a Two-Dimensional Simulation
Satoshi MATSUDA, Nobuyuki ITOH, Chihiro YOSHINO, Yoshiroh TSUBOI, Yasuhiro KATSUMATA, Hiroshi IWAI, |
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Summary | Full Text:PDF | |
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Vol.E77-C No.2
pp.129-133
Special SectionPAPER
Process Simulation
Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS
Kazuhiko KAI, Shigeki KURODA, Kenji NISHI, |
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Summary | Full Text:PDF | |
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Vol.E77-C No.2
pp.134-138
Special SectionPAPER
Device Modeling
A non-Local Formulation of Impact Ionization for Silicon
Paul G. SCROBOHACI, Ting-wei TANG, |
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Summary | Full Text:PDF | |
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Vol.E77-C No.2
pp.139-147
Special SectionPAPER
Device Modeling
A Unified Model for the Simulation of Small-Geometry Devices
Anna PIERANTONI, Paolo CIAMPOLINI, Andrea LIUZZO, Giorgio BACCARANI, |
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Summary | Full Text:PDF | |
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Vol.E77-C No.2
pp.148-154
Special SectionPAPER
Device Modeling
On the Origin of Tunneling Currents in Scaled Silicon Devices
Andreas SCHENK, Ulrich KRUMBEIN, Stephan MÜLLER, Hartmut DETTMER, Wolfgang FICHTNER, |
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Summary | Full Text:PDF | |
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