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Vol.E77-C No.3
pp.453-458
Special SectionPAPER
Process Technology
Evaluation of Plasma Damage to Gate Oxide
Yukiharu URAOKA, Koji ERIGUCHI, Tokuhiko TAMAKI, Kazuhiko TSUJI, |
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Vol.E77-C No.3
pp.459-463
Special SectionPAPER
Process Technology
Elimination of Negative Charge-Up during High Current Ion Implantation
Kazunobu MAMENO, Atsuhiro NISHIDA, Hideharu NAGASAWA, Hideaki FUJIWARA, Koji SUZUKI, Kiyoshi YONEDA, |
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Vol.E77-C No.3
pp.464-472
Special SectionPAPER
Process Technology
Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors
Makoto TAKIYAMA, Susumu OHTSUKA, Tadashi SAKON, Masaharu TACHIMORI, |
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Vol.E77-C No.3
pp.473-479
Special SectionPAPER
Process Technology
Water Desorption Control of Interlayer Dielectrics to Reduce MOSFET Hot Carrier Degradation
Kimiaki SHIMOKAWA, Takashi USAMI, Masaki YOSHIMARU, |
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Vol.E77-C No.3
pp.480-485
Special SectionPAPER
Process Technology
Ti Salicide Process for Subquarter-Micron CMOS Devices
Ken-ichi GOTO, Tatsuya YAMAZAKI, Yasuo NARA, Tetsu FUKANO, Toshihiro SUGII, Yoshihiro ARIMOTO, Takashi ITO, |
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Vol.E77-C No.3
pp.486-491
Special SectionPAPER
Process Technology
Identification of the Particle Source in LSI Manufacturing Process Equipment
Yoshimasa TAKII, Nobuo AOI, Yuichi HIROFUJI, |
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Vol.E77-C No.3
pp.492-497
Special SectionPAPER
Process Technology
Removal of Particles on Si Wafers in SC-1 Solution
Hiroyuki KAWAHARA, Kenji YONEDA, Izumi MUROZONO, Yoshihiro TODOKORO, |
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Vol.E77-C No.3
pp.498-509
PAPER
Electronic Circuits
Stability of an Active Two Port Network in terms of S Parameters
Yoshihiro MIWA, |
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Vol.E77-C No.3
pp.510-514
PAPER
Opto-Electronics
Modified Numerical Technique for Beam Propagation Method Based on the Galerkin's Technique
Guosheng PU, Tetsuya MIZUMOTO, Yoshiyuki NAITO, |
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Vol.E77-C No.3
pp.515-518
LETTER
Integrated Electronics
Temperature Adaptive Voltage Reference Network for Realizing a Transconductance with Low Temperature Sensitivity
Rabin RAUT, |
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Summary | Full Text:PDF | |
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