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IEICE Trans

Keyword : power MOSFET

Study on Parasitic Bipolar Effect in a 200-V-Class Power MOSFET Using Silicon Direct Bonding SOI Wafer
Satoshi MATSUMOTO Toshiaki YACHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 431-435
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: 
Keyword: 
SOI, power MOSFET, parasitic bipolar effect, emission microscopy, 
 Summary | Full Text:PDF