Study on Parasitic Bipolar Effect in a 200-V-Class Power MOSFET Using Silicon Direct Bonding SOI Wafer Satoshi MATSUMOTOToshiaki YACHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1997/03/25 Vol. E80-CNo. 3 ;
pp. 431-435 Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies) Category: Keyword: SOI, power MOSFET, parasitic bipolar effect, emission microscopy,
