Keyword : parasitic bipolar effect

Study on Parasitic Bipolar Effect in a 200-V-Class Power MOSFET Using Silicon Direct Bonding SOI Wafer
Satoshi MATSUMOTO Toshiaki YACHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3 ; pp. 431-435
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
SOIpower MOSFETparasitic bipolar effectemission microscopy
 Summary | Full Text:PDF