Study on Parasitic Bipolar Effect in a 200-V-Class Power MOSFET Using Silicon Direct Bonding SOI Wafer

Satoshi MATSUMOTO  Toshiaki YACHI  

IEICE TRANSACTIONS on Electronics   Vol.E80-C   No.3   pp.431-435
Publication Date: 1997/03/25
Online ISSN: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
SOI,  power MOSFET,  parasitic bipolar effect,  emission microscopy,  

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The parasitic bipolar effect in a 200-V-class thin-film SOI power MOSFET fabricated using the silicon wafer direct bonding wafer was investigated by electrical measurement, two-dimensional process simulation, emission microscopy, and 2-dimensional thermal analysis. It degraded the breakdown voltage of the thin-film SOI power MOSFET and was caused by the increase in the sheet resistance of the body contact region. Photo emission analysis indicated that excess holes recombined in the n+-source region.