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| Keyword : InGaAs
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Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C
No. 8 ;
pp. 1310-1316
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: III-V High-Speed Devices and Circuits
Keyword:
InP, InGaAs, HBT, turn-on voltage, | | | Summary | Full Text:PDF | |
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Fabrication and Characterization of Capless In0.52Al0.48As/In0.53Ga0.47As HEMTs
Jae-Hyung JANG Ilesanmi ADESIDA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2006/08/01
Vol. E89-C
No. 8 ;
pp. 1259-1262
Type of Manuscript:
LETTER
Category: Semiconductor Materials and Devices
Keyword:
InGaAs, InP, capless HEMTs, | | | Summary | Full Text:PDF | |
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N-InAlAs/InGaAs HEMT DCFL Inverter Fabricated Using Pt-Based Gate and Photochemical Dry Etching
Naoki HARADA Shigeru KURODA Kohki HIKOSAKA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/10/25
Vol. E75-C
No. 10 ;
pp. 1165-1171
Type of Manuscript:
Special Section PAPER (Special Issue on Compound Semiconductor Integrated Circuits)
Category:
Keyword:
HEMT, InGaAs, Schottky junction, DCEL, dry etching, | | | Summary | Full Text:PDF | |
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