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| Keyword : turn-on voltage
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Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C
No. 8 ;
pp. 1310-1316
Type of Manuscript:
Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: III-V High-Speed Devices and Circuits
Keyword:
InP, InGaAs, HBT, turn-on voltage, | | | Summary | Full Text:PDF | |
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