Ilesanmi ADESIDA


Fabrication and Characterization of Capless In0.52Al0.48As/In0.53Ga0.47As HEMTs
Jae-Hyung JANG Ilesanmi ADESIDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/08/01
Vol. E89-C  No. 8  pp. 1259-1262
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
InGaAsInPcapless HEMTs
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High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire
Ilesanmi ADESIDA Vipan KUMAR Jinwei YANG Muhammed Asif KHAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1955-1959
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaNHEMTssapphire
 Summary | Full Text:PDF