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FOREWORD Tamotsu HASHIZUME | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C
No. 8
pp. 1309-1309
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FOREWORD Category: Keyword:
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FOREWORD Tamotsu HASHIZUME | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C
No. 5
pp. 675-675
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Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiNx Film Tamotsu HASHIZUME Ryuusuke NAKASAKI Shin-ya OOTOMO Susumu OYAMA Hideki HASEGAWA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C
No. 10
pp. 1455-1461
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Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000)) Category: Novel Electron Devices Keyword: GaN, passivation, surface, SiNx, ECR, | | | Summary | Full Text:PDF | |
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