Tamotsu HASHIZUME


FOREWORD
Tamotsu HASHIZUME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1309-1309
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
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FOREWORD
Tamotsu HASHIZUME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 675-675
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
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Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
Hong-Quan ZHAO Seiya KASAI Tamotsu HASHIZUME Nan-Jian WU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1063-1069
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Emerging Devices
Keyword: 
Schottky wrap gate (WPG)GaAs hexagonal nanowire networkflip flop (FF)ring oscillator
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Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress
Hideki HASEGAWA Seiya KASAI Taketomo SATO Tamotsu HASHIZUME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 874-882
Type of Manuscript:  INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: 
Keyword: 
heterostructureIII-V semiconductorsnanotechnologyhigh speed devicessensorssmart chips
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Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al2O3 Insulated Gate
Shinya OOTOMO Hideki HASEGAWA Tamotsu HASHIZUME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2043-2050
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaNAlGaNleakage currentsurface statespassivation
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Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiNx Film
Tamotsu HASHIZUME Ryuusuke NAKASAKI Shin-ya OOTOMO Susumu OYAMA Hideki HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1455-1461
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
GaNpassivationsurfaceSiNxECR
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