Keyword : ECR


In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering
Shun-ichiro OHMI Shin ISHIMATSU Yuske HORIUCHI Sohya KUDOH 
Publication:   
Publication Date: 2020/06/01
Vol. E103-C  No. 6 ; pp. 299-303
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Semiconductor Materials and Devices
Keyword: 
high-kgate insulatorinterfacial layernitridationN2-plasmaECRHfN
 Summary | Full Text:PDF

Characterization of AlON Thin Films Formed by ECR Plasma Oxidation of AlN/Si(100)
Shun-ichiro OHMI Go YAMANAKA Tetsushi SAKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1 ; pp. 24-29
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
high-κAlONECRsputteringoxidation
 Summary | Full Text:PDF

Surface Passivation Process for GaN-Based Electronic Devices Utilizing ECR-CVD SiNx Film
Tamotsu HASHIZUME Ryuusuke NAKASAKI Shin-ya OOTOMO Susumu OYAMA Hideki HASEGAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1455-1461
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
GaNpassivationsurfaceSiNxECR
 Summary | Full Text:PDF