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IEICE Trans

Sohya KUDOH

In-Situ N2-Plasma Nitridation for High-k HfN Gate Insulator Formed by Electron Cyclotron Resonance Plasma Sputtering
Shun-ichiro OHMI Shin ISHIMATSU Yuske HORIUCHI Sohya KUDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2020/06/01
Vol. E103-C  No. 6  pp. 299-303
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Semiconductor Materials and Devices
Keyword: 
high-k, gate insulator, interfacial layer, nitridation, N2-plasma, ECR, HfN, 
 Summary | Full Text:PDF
Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient
Sohya KUDOH Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2018/05/01
Vol. E101-C  No. 5  pp. 328-333
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Hf-based MONOS structure, ECR plasma sputtering, endurance, atomically flat Si surface, Ar/H2 ambient, 
 Summary | Full Text:PDF
A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics
Sohya KUDOH Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C  No. 5  pp. 504-509
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughness, oxidation process, substrate orientation, MIS diode, 
 Summary | Full Text:PDF
A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics
Sohya KUDOH Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C  No. 5  pp. 402-405
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si surface roughness, sacrificial oxidation, TDDB, 
 Summary | Full Text:PDF