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| Shun-ichiro OHMI
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A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics
Sohya KUDOH Shun-ichiro OHMI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2016/05/01
Vol. E99-C
No. 5
pp. 504-509
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
Si surface roughness, oxidation process, substrate orientation, MIS diode, | | | Summary | Full Text:PDF | |
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A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics
Sohya KUDOH Shun-ichiro OHMI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C
No. 5
pp. 402-405
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
Si surface roughness, sacrificial oxidation, TDDB, | | | Summary | Full Text:PDF | |
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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
Min LIAO Hiroshi ISHIWARA Shun-ichiro OHMI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C
No. 5
pp. 885-890
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
pentacene, OFETs, high-k, grain size, HfON, | | | Summary | Full Text:PDF | |
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A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels
Shun-ichiro OHMI Tetsushi SAKAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C
No. 5
pp. 994-999
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword:
twin-channel, self-align, SOI, Ω-gate, SiN, wet etching, | | | Summary | Full Text:PDF | |
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Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation