Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient

Sohya KUDOH  Shun-ichiro OHMI  

IEICE TRANSACTIONS on Electronics   Vol.E101-C   No.5   pp.328-333
Publication Date: 2018/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E101.C.328
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Hf-based MONOS structure,  ECR plasma sputtering,  endurance,  atomically flat Si surface,  Ar/H2 ambient,  

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In this study, the effect of atomically flat Si(100) surface on Hf-based Metal-Oxide-Nitride-Oxide-Silicon (MONOS) structure was investigated. After the atomically flat Si(100) surface formation by annealing at 1050℃/60min in Ar/4%H2 ambient, HfO2(O)/HfN1.0(N)/HfO2(O) structure with thickness of 10/3/2nm, respectively, was in-situ deposited by electron cyclotron resonance (ECR) plasma sputtering. The memory window (MW) of Al/HfO2/HfN1.0/HfO2/p-Si(100) diodes was increased from 1.0V to 2.5V by flattening of Si(100) surface. The program and erase (P/E) voltage/time were set as 10V/5s and -8V/5s, respectively. Furthermore, it was found that the gate current density after the 103P/E cycles was decreased one order of magnitude by flattening of Si(100) surface in Ar/4.0%H2 ambient.