A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics

Sohya KUDOH  Shun-ichiro OHMI  

IEICE TRANSACTIONS on Electronics   Vol.E98-C   No.5   pp.402-405
Publication Date: 2015/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E98.C.402
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Si surface roughness,  sacrificial oxidation,  TDDB,  

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In this study, Si(100) surface flattening process was investigated utilizing sacrificial oxidation method to improve Metal–Insulator–Semiconductor (MIS) diode characteristics. By etching of the 100 nm-thick sacrificial oxide formed by thermal oxidation at 1100°C, the surface roughness of Si substrate was reduced. The obtained Root-Mean-Square (RMS) roughness was decreased from 0.15 nm (as-cleaned) to 0.07 nm in the case of sacrificial oxide formed by wet oxidation, while it was 0.10 nm in the case of dry oxidation. Furthermore, time-dependent dielectric breakdown (TDDB) characteristic of Al/SiO2(10 nm)/p-Si(100) MIS diode structures was found to be improved by the reduction of Si surface RMS roughness.