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IEICE Trans

Masaki HIRASE

Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor
Makoto AKIZUKI Masaki HIRASE Atsushi SAITA Hiroyuki AOE Atsumasa DOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 1007-1012
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
MOS capacitors, polycystalline silicon, amorphous silicon, stress, in-situ doping, gate oxide, constant current stress, dielectric breakdown, trapped charge, 
 Summary | Full Text:PDF