Keyword : dielectric breakdown


Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process
Jung-Sheng CHEN Ming-Dou KER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/03/01
Vol. E91-C  No. 3 ; pp. 378-384
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
gate-oxide reliabilitysample-and-hold amplifierdielectric breakdownbootstrapped switchswitched-capacitor circuit
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Effects of Post-Annealing on Dielectric Properties of (Ba, Sr)TiO3 Thin Films Prepared by Liquid Source Chemical Vapor Deposition
Tsuyoshi HORIKAWA Junji TANIMURA Takaaki KAWAHARA Mikio YAMAMUKA Masayoshi TARUTANI Kouichi ONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4 ; pp. 497-504
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
chemical vapor deposition(Ba,Sr)TiO3annealingdielectric constantdielectric breakdown
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Elimination of Negative Charge-Up during High Current Ion Implantation
Kazunobu MAMENO Atsuhiro NISHIDA Hideharu NAGASAWA Hideaki FUJIWARA Koji SUZUKI Kiyoshi YONEDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 459-463
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
ion implantationcharge-upelectron showeroxidedielectric breakdown
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Influences of Magnesium and Zinc Contaminations on Dielectric Breakdown Strength of MOS Capacitors
Makoto TAKIYAMA Susumu OHTSUKA Tadashi SAKON Masaharu TACHIMORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3 ; pp. 464-472
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
silicon dioxidedielectric breakdownmetal contaminationmagnesiumzinc
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Electrical Characteristics of Silicon Devices after UV-Excited Dry Cleaning
Yasuhisa SATO Rinshi SUGINO Masaki OKUNO Toshiro NAKANISHI Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/01/25
Vol. E76-C  No. 1 ; pp. 41-46
Type of Manuscript:  Special Section PAPER (Special Issue on Opto-Electronics and LSI)
Category: Opto-Electronics Technology for LSIs
Keyword: 
dry cleaningdielectric breakdownFowler-Nordheim leakage currentjunction leakage currentmetal contamination
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Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor
Makoto AKIZUKI Masaki HIRASE Atsushi SAITA Hiroyuki AOE Atsumasa DOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 1007-1012
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
MOS capacitorspolycystalline siliconamorphous siliconstressin-situ dopinggate oxideconstant current stressdielectric breakdowntrapped charge
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