Keyword : MOS capacitors


Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
Toshihiro MATSUDA Shinsuke ISHIMARU Shingo NOHARA Hideyuki IWATA Kiyotaka KOMOKU Takayuki MORISHITA Takashi OHZONE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12 ; pp. 1523-1530
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOS capacitorsSi-implantationthermal oxideI-V hysteresishysteresis windownonvolatile memory
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Effects of the Gate Polycrystalline Silicon Film on the Characteristics of MOS Capacitor
Makoto AKIZUKI Masaki HIRASE Atsushi SAITA Hiroyuki AOE Atsumasa DOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9 ; pp. 1007-1012
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
MOS capacitorspolycystalline siliconamorphous siliconstressin-situ dopinggate oxideconstant current stressdielectric breakdowntrapped charge
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