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IEICE Trans

Keyword : thin oxide films

New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films
Tetsuo ENDOH Kazuyosi SHIMIZU Hirohisa IIZUKA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/10/25
Vol. E80-C  No. 10 ; pp. 1310-1316
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
thin oxide films, stress leakage current, flash memory, step tonneling, 
 Summary | Full Text:PDF