Keyword : stress leakage current


New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films
Tetsuo ENDOH Kazuyosi SHIMIZU Hirohisa IIZUKA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/10/25
Vol. E80-C  No. 10 ; pp. 1310-1316
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
thin oxide filmsstress leakage currentflash memorystep tonneling
 Summary | Full Text:PDF

New Write/Erase Operation Technology for Flash EEPROM Cells to lmprove the Read Disturb Characteristics
Tetsuo ENDOH Hirohisa IIZUKA Riichirou SHIROTA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/10/25
Vol. E80-C  No. 10 ; pp. 1317-1323
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
flash memoryread disturb characteristicswrite/erase operationstress leakage current
 Summary | Full Text:PDF