Kazuyosi SHIMIZU


New Reduction Mechanism of the Stress Leakage Current Based on the Deactivation of Step Tunneling Sites for Thin Oxide Films
Tetsuo ENDOH Kazuyosi SHIMIZU Hirohisa IIZUKA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/10/25
Vol. E80-C  No. 10  pp. 1310-1316
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
thin oxide filmsstress leakage currentflash memorystep tonneling
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