Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C
No. 8 ;
pp. 1288-1294
Type of Manuscript:
Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Simulation Methodology and Environment
Keyword:
fully-depleted SOI, floating-body effect, parasitic channel leakage, systematic yield, process optimization, |