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Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver
Andreas WETTSTEIN Andreas SCHENK Wolfgang FICHTNER | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C
No. 8 ;
pp. 1189-1193
Type of Manuscript:
Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword:
stacked dielectrics, direct tunneling, Schrodinger equation, | | | Summary | Full Text:PDF | |
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