Andreas SCHENK

Simulation of DGSOI MOSFETs with a Schrodinger-Poisson Based Mobility Model
Andreas SCHENK Andreas WETTSTEIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 385-390
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulation, DGSOI MOSFET, channel mobility, quantum effects, Schrodinger-Poisson solver, 
 Summary | Full Text:PDF
Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation
Fabian M. BUFLER Christoph ZECHNER Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 308-313
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
ballistic transport, Monte Carlo simulation, nanoscale MOSFETs, nonlinear Poisson equation, self-consistency, 
 Summary | Full Text:PDF
On Density-Gradient Modeling of Tunneling through Insulators
Timm HOHR Andreas SCHENK Andreas WETTSTEIN Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 379-384
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
device simulation, density-gradient model, direct tunneling, gate leakage, resonant tunneling, 
 Summary | Full Text:PDF
Simulation of RF Noise in MOSFETs Using Different Transport Models
Andreas SCHENK Bernhard SCHMITHUSEN Andreas WETTSTEIN Axel ERLEBACH Simon BRUGGER Fabian M. BUFLER Thomas FEUDEL Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 481-489
Type of Manuscript:  PAPER
Category: Device Modeling and Simulation
Keyword: 
device simulation, RF noise, impedance field method, Langevin equation, 
 Summary | Full Text:PDF
Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver
Andreas WETTSTEIN Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1189-1193
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
stacked dielectrics, direct tunneling, Schrodinger equation, 
 Summary | Full Text:PDF
Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors
Andreas SCHOLZE Andreas SCHENK Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/25
Vol. E83-C  No. 8  pp. 1242-1246
Type of Manuscript:  Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Device Modeling and Simulation
Keyword: 
single-electron tunneling, Coulomb blockade, conductance oscillations, transfer Hamiltonian formalism, 
 Summary | Full Text:PDF
On the Origin of Tunneling Currents in Scaled Silicon Devices
Andreas SCHENK Ulrich KRUMBEIN Stephan MÜLLER Hartmut DETTMER Wolfgang FICHTNER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 148-154
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Modeling
Keyword: 
integrated electronics, semiconductor materials and devices, quantum electronics, 
 Summary | Full Text:PDF