Simulation of Direct Tunneling through Stacked Gate Dielectrics by a Fully Integrated 1D-Schrodinger-Poisson Solver

Andreas WETTSTEIN
Andreas SCHENK
Wolfgang FICHTNER

Publication
IEICE TRANSACTIONS on Electronics   Vol.E83-C    No.8    pp.1189-1193
Publication Date: 2000/08/25
Online ISSN: 
DOI: 
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Gate Tunneling Simulation
Keyword: 
stacked dielectrics,  direct tunneling,  Schrodinger equation,  

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Summary: 
We compare the numerical results for electron direct tunneling currents for single gate oxides, ON- and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and of the modeling of electron transport in silicon.