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IEICE Trans

Keyword : RRAM

Resistive Switching Characteristics of Silicon Nitride-Based RRAM Depending on Top Electrode Metals
Sungjun KIM Sunghun JUNG Min-Hwi KIM Seongjae CHO Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/05/01
Vol. E98-C  No. 5 ; pp. 429-433
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
RRAM, switching and conduction mechanism, top electrode (TE), 
 Summary | Full Text:PDF
Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics
Kyung-Chang RYOO Jeong-Hoon OH Sunghun JUNG Hyungjin KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 842-846
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
RRAM, conductive defect, cell thickness, reset current, set voltage, forming voltage, and low power, 
 Summary | Full Text:PDF
A 3D RRAM Using a Stackable Multi-Layer 1TXR Cell
Ji ZHANG Yiqing DING Xiaoyong XUE Gang JIN Yuxin WU Yufeng XIE Yinyin LIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/12/01
Vol. E93-C  No. 12 ; pp. 1692-1699
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
3D, RRAM, 1TXR, 
 Summary | Full Text:PDF