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IEICE Trans

Keyword : MOS diode

The Influence of High-Temperature Sputtering on the N-Doped LaB6 Thin Film Formation Utilizing RF Sputtering
Kyung Eun PARK Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2020/06/01
Vol. E103-C  No. 6 ; pp. 293-298
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Electronic Materials
Keyword: 
N-doped LaB6, MOS diode, Schottky diode, effective work function, RF sputtering, 
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