Kyung Eun PARK

The Influence of High-Temperature Sputtering on the N-Doped LaB6 Thin Film Formation Utilizing RF Sputtering
Kyung Eun PARK Shun-ichiro OHMI 
Publication Date: 2020/06/01
Vol. E103-C  No. 6  pp. 293-298
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Electronic Materials
N-doped LaB6MOS diodeSchottky diodeeffective work functionRF sputtering
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