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IEICE Trans

Keyword : Hf-based MONOS structure

Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient
Sohya KUDOH Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2018/05/01
Vol. E101-C  No. 5 ; pp. 328-333
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Hf-based MONOS structure, ECR plasma sputtering, endurance, atomically flat Si surface, Ar/H2 ambient, 
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