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IEICE Trans

Yukisato NOGAMI

Two-Dimensional Simulation of Electric Field and Carrier Concentration of Low-Temperature N-Channel Poly-Si LDD TFTs
Yukisato NOGAMI Toshifumi SATOH Hiroyuki TANGO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 983-987
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
Keyword: 
n-channel poly-Si LDD TFT, device simulation, electric field distribution, carrier concentration distribution, hot-carrier degradation, 
 Summary | Full Text:PDF