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IEICE Trans

Yoko SAKURAI

Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 730-736
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
electron dynamics, collective motion of electron, Si-nano dot, two-dimensional electron gas, tunneling, Si-nano dot type floating gate MOS capacitor, 
 Summary | Full Text:PDF