Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C
No. 5 ;
pp. 730-736
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
electron dynamics, collective motion of electron, Si-nano dot, two-dimensional electron gas, tunneling, Si-nano dot type floating gate MOS capacitor, |