Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor

Masakazu MURAGUCHI
Yoko SAKURAI
Yukihiro TAKADA
Shintaro NOMURA
Kenji SHIRAISHI
Mitsuhisa IKEDA
Katsunori MAKIHARA
Seiichi MIYAZAKI
Yasuteru SHIGETA
Tetsuo ENDOH

Publication
IEICE TRANSACTIONS on Electronics   Vol.E94-C    No.5    pp.730-736
Publication Date: 2011/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E94.C.730
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
electron dynamics,  collective motion of electron,  Si-nano dot,  two-dimensional electron gas,  tunneling,  Si-nano dot type floating gate MOS capacitor,  

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Summary: 
We propose the collective electron tunneling model in the electron injection process between the Nano Dots (NDs) and the two-dimensional electron gas (2DEG). We report the collective motion of electrons between the 2DEG and the NDs based on the measurement of the Si-ND floating gate structure in the previous studies. However, the origin of this collective motion has not been revealed yet. We evaluate the proposed tunneling model by the model calculation. We reveal that our proposed model reproduces the collective motion of electrons. The insight obtained by our model shows new viewpoints for designing future nano-electronic devices.