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IEICE Trans

Shigeyuki AKITA

200 V Rating CMOS Transistor Structure with Intrinsic SOI Substrate
Hitoshi YAMAGUCHI Shigeyuki AKITA Hiroaki HIMI Kazunori KAWAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12  pp. 1961-1967
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high breakdown voltage, CMOS transistor, electric field relaxation, SOI, intrinsic layer, 
 Summary | Full Text:PDF
Analysis of Self-Heating in SOI High Voltage MOS Transistor
Hitoshi YAMAGUCHI Hiroaki HIMI Shigeyuki AKITA Toshiyuki MORISHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3  pp. 423-430
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: 
Keyword: 
SOI, high voltage, self-heating, temperature-rise, electrothermal simulation, 
 Summary | Full Text:PDF
A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line
Takamoto WATANABE Yasuaki MAKINO Yoshinori OHTSUKA Shigeyuki AKITA Tadashi HATTORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/12/25
Vol. E76-C  No. 12  pp. 1774-1779
Type of Manuscript:  Special Section PAPER (Special Issue on ASICs for Automotive Electronics)
Category: 
Keyword: 
time measurement, gate delay, inverter, phase comparator, A/D converter, 
 Summary | Full Text:PDF