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A CMOS Time-to-Digital Converter LSI with Half-Nanosecond Resolution Using a Ring Gate Delay Line
Takamoto WATANABE Yasuaki MAKINO Yoshinori OHTSUKA Shigeyuki AKITA Tadashi HATTORI
Publication
IEICE TRANSACTIONS on Electronics
Vol.E76-C
No.12
pp.1774-1779 Publication Date: 1993/12/25 Online ISSN:
DOI: Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Issue on ASICs for Automotive Electronics) Category: Keyword: time measurement, gate delay, inverter, phase comparator, A/D converter,
Full Text: PDF>>
Summary:
The development of highly accurate and durable control system is becoming a must for todays high performance automobiles. For example, it is necessary to up-grade todays materials and methods creating more sensitive sensors, higher speed processors and more accurate actuators, while also being more durable. Thus, the development of a CMOS time-to-digital converter LSI with half-nanosecond resolution, which controls only pulse signals was achieved by employing 1.5 µm CMOS technology. The new signal detecting circuit, 1.1 mm2 in size, converts time to numerical values over a wide measurement range (13 bits). The compact digital circuit employs a newly developed "ring gate delay system". Within the LSI the fully digital circuit is highly durable. This allows it to be utilized even under severe conditions (for example an operating ambient temperature of 130 ). In order to measure time accurately, a method of correcting the variation of measurement time data employing a real-time conversion fully digital circuit is described. This method allows for fully automatic correction with a microcomputer, so no manual adjustment is required. In addition to sensor circuit applications, the LSI has great potential for Application Specific Integrated Circuit, (ASIC) such as a function cell with is a completely new method of measuring time.
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