Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7pp. 1004-1008 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: Nitride-based Devices Keyword: AlGaN/GaN, heterojunction field-effect transistor, current collapse, gate bias stress,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/07/01 Vol. E91-CNo. 7pp. 1020-1024 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007) Category: GaN Process Technology Keyword: Ohmic contact, p-GaN, dry-etching, etching damage, SiCl4,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-CNo. 7pp. 1042-1046 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: AlGaN/GaN HFETs, threshold voltage, temperature coefficient, illumination, buffer layer,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-CNo. 7pp. 1031-1036 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: HFET, GaN, AlGaN, MIS, insulator, enhancement,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-CNo. 4pp. 683-689 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Compound Semiconductor Devices Keyword: device simulation, open-gated FET, AlGaN/GaN heterostructure, trap, surface state, interface state,