Daigo KIKUTA


Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage
Masaya OKADA Ryohei TAKAKI Daigo KIKUTA Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1042-1046
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN HFETsthreshold voltagetemperature coefficientilluminationbuffer layer
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A Mechanism of Enhancement-Mode Operation of AlGaN/GaN MIS-HFET
Daigo KIKUTA Jin-Ping AO Junya MATSUDA Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1031-1036
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
HFETGaNAlGaNMISinsulatorenhancement
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Evaluation of Surface States of AlGaN/GaN HFET Using Open-Gated Structure
Daigo KIKUTA Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C  No. 4  pp. 683-689
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
device simulationopen-gated FETAlGaN/GaN heterostructuretrapsurface stateinterface state
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High-Temperature Stability of Copper-Gate AlGaN/GaN High Electron Mobility Transistors
Jin-Ping AO Daigo KIKUTA Naotaka KUBOTA Yoshiki NAOI Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2051-2057
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
Cu-gateAlGaN/GaNhigh electron mobility transistorgate leakage currenthigh-temperature stability
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