Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage

Masaya OKADA  Ryohei TAKAKI  Daigo KIKUTA  Jin-Ping AO  Yasuo OHNO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E89-C   No.7   pp.1042-1046
Publication Date: 2006/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e89-c.7.1042
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN HFETs,  threshold voltage,  temperature coefficient,  illumination,  buffer layer,  

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Summary: 
This investigation of the temperature and illumination effects on the AlGaN/GaN HFET threshold voltage shows that it shifts about -1 V under incandescent lamp or blue LED illumination, while almost no shift takes place under red LED illumination. The temperature coefficient for the threshold voltage shift is +3.44 mV/deg under the illuminations and +0.28 mV/deg in darkness. The threshold voltage variation can be attributed to a virtual back-gate effect caused by light-generated buffer layer potential variations. The expressions for the potential variation are derived using Shockley-Read-Hall (SRH) statistics and the Maxwell-Boltzmann distribution for the carriers and deep traps in the buffer layer. The expressions indicate that large photoresponses will occur when the electron concentration in the buffer layer is extremely small, that is, highly resistive. In semi-insulating substrates, the substrate potential varies so as to keep the trap occupation function constant. The sign and the magnitude of the threshold voltage variation are explained by the shift of the pinning energy calculated from the Fermi-Dirac distribution function.