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IEICE Trans

Hiroaki SHIOZAWA

Interface State Density between Direct Nitridation Layer and SiC Estimated from Current Voltage Characteristics of MIS Schottky Diode
Kiichi KAMIMURA Hiroaki SHIOZAWA Tomohiko YAMAKAMI Rinpei HAYASHIBE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/12/01
Vol. E92-C  No. 12  pp. 1470-1474
Type of Manuscript:  Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
Category: Fundamentals for Nanodevices
Keyword: 
SiC, nitride, interface, MIS Schottky, 
 Summary | Full Text:PDF