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Atomistic Simulation of RTA Annealing for Shallow Junction Formation Characterizing both BED and TED Min YU Ru HUANG Xing ZHANG Yangyuan WANG Hideki OKA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C
No. 3
pp. 295-300
Type of Manuscript:
Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02)) Category: Keyword: atomistic model, simulation, BED, TED, | | | Summary | Full Text:PDF | |
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