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Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
Norio SADACHIKA Takahiro MURAKAMI Hideki OKA Ryou TANABE Hans Juergen MATTAUSCH Mitiko MIURA-MATTAUSCH
IEICE TRANSACTIONS on Electronics
Publication Date: 2008/08/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
double gate MOSFET, HiSIM, circuit simulation, volume inversion,
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We have developed a compact double-gate metal-oxide-semiconductor field-effect transistor model for circuit simulation considering the volume inversion effect by solving the Poisson equation explicitly. It is verified that applied voltage dependence of the calculated potential values both at the surface and at the center of the silicon layer reproduce 2 dimensional device simulation results for any device structure, confirming the validity of the model for device optimization.