Ryou TANABE


Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
Norio SADACHIKA Takahiro MURAKAMI Hideki OKA Ryou TANABE Hans Juergen MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/08/01
Vol. E91-C  No. 8  pp. 1379-1381
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
double gate MOSFETHiSIMcircuit simulationvolume inversion
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