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IEICE Trans

Garam KIM

Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel
Min-Chul SUN Sang Wan KIM Garam KIM Hyun Woo KIM Hyungjin KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 639-643
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
TFET, compatibility to CMOS technology flow, sigma-shape embedded SiGe source, recessed channel, 
 Summary | Full Text:PDF
Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors
Min-Chul SUN Hyun Woo KIM Sang Wan KIM Garam KIM Hyungjin KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 826-830
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
vertical-channel TFET, field-coupling effect, source configuration, 
 Summary | Full Text:PDF
Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region
Hyungjin KIM Min-Chul SUN Hyun Woo KIM Sang Wan KIM Garam KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 820-825
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Tunnel Field-Effect Transistors, threshold voltage, VT-control doping region, 
 Summary | Full Text:PDF