Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-CNo. 7pp. 1042-1046 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: AlGaN/GaN HFETs, threshold voltage, temperature coefficient, illumination, buffer layer,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2006/07/01 Vol. E89-CNo. 7pp. 1031-1036 Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005) Category: GaN-Based Devices Keyword: HFET, GaN, AlGaN, MIS, insulator, enhancement,
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-CNo. 4pp. 683-689 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Compound Semiconductor Devices Keyword: device simulation, open-gated FET, AlGaN/GaN heterostructure, trap, surface state, interface state,