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Vol.E76-C No.4
pp.506-510
INVITED PAPER
Device Technology
Effects of Synchrotron X-Ray Irradiation on Hot Carrier Reliability in Subquarter-Micrometer NMOSFETs
Toshiaki TSUCHIYA, Mitsuru HARADA, Kimiyoshi DEGUCHI, Tadahito MATSUDA, |
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Vol.E76-C No.4
pp.511-518
Special SectionPAPER
Device Technology
A Comparative Study of High-Field Endurance for NH3-Nitrided and N2O-Oxynitrided Ultrathin SiO2 Films
Hisashi FUKUDA, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.4
pp.519-524
Special SectionPAPER
Device Technology
A New Technique for Evaluating Gate Oxide Reliability Using a Photon Emission Method
Yukiharu URAOKA, Kazuhiko TSUJI, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.4
pp.525-531
Special SectionPAPER
Device Technology
A Highly Drivable CMOS Design with Very Narrow Sidewall and Novel Channel Profile for 3.3 V High Speed Logic Application
Jiro IDA, Satoshi ISHII, Youko KAJITA, Tomonobu YOKOYAMA, Masayoshi INO, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.4
pp.532-540
Special SectionPAPER
Device Technology
A Novel CMOS Structure with Polysilicon Source/Drain (PSD) Transistors by Self-Aligned Silicidation
Masahiro SHIMIZU, Takehisa YAMAGUCHI, Masahide INUISHI, Katsuhiro TSUKAMOTO, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.4
pp.541-547
Special SectionPAPER
Device Technology
Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450 Furnace Annealing
Koji KOTANI, Tadahiro OHMI, Satoshi SHIMONISHI, Tomohiro MIGITA, Hideki KOMORI, Tadashi SHIBATA, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.4
pp.548-555
Special SectionPAPER
Device Technology
A Capacitor over Bit-Line (COB) Stacked Capacitor Cell Using Local Interconnect Layer for 64 MbDRAMs
Naoki KASAI, Masato SAKAO, Toshiyuki ISHIJIMA, Eiji IKAWA, Hirohito WATANABE, Toshio TAKESHIMA, Nobuhiro TANABE, Kazuo TERADA, Takamaro KIKKAWA, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.4
pp.556-561
Special SectionPAPER
Device Technology
Minimizing the Edge Effect in a DRAM Cell Capacitor by Using a Structure with High-Permittivity Thin Film
Takeo YAMASHITA, Tadahiro OHMI, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.4
pp.562-571
Special SectionPAPER
Device Technology
An Experimental Full-CMOS Multigigahertz PLL LSI Using 0.4-µm Gate Ultrathin-Film SIMOX Technology
Yuichi KADO, Masao SUZUKI, Keiichi KOIKE, Yasuhisa OMURA, Katsutoshi IZUMI, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.4
pp.572-576
Special SectionPAPER
Device Technology
High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques
Manabu KOJIMA, Atsushi FUKURODA, Tetsu FUKANO, Naoshi HIGAKI, Tatsuya YAMAZAKI, Toshihiro SUGII, Yoshihiro ARIMOTO, Takashi ITO, |
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Summary | Full Text:PDF | |
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