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Vol.E76-C No.11
pp.1589-1594
Special SectionPAPER
DRAM
A Smart Design Methodology with Distributed Extra Gate-Arrays for Advanced ULSI Memories
Masaki TSUKUDA, Kazutami ARIMOTO, Mikio ASAKURA, Hideto HIDAKA, Kazuyasu FUJISHIMA, |
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Vol.E76-C No.11
pp.1595-1603
Special SectionPAPER
DRAM
A Line-Mode Test with Data Register for ULSI Memory Architecture
Tsukasa OOISHI, Masaki TSUKUDE, Kazutani ARIMOTO, Yoshio MATSUDA, Kazuyasu FUJISHIMA, |
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Vol.E76-C No.11
pp.1604-1610
Special SectionPAPER
DRAM
Minority Carrier Collection in 256 M-bit DRAM Cell on Incidence of Alpha-Particle Analyzed by Three-Dimensional Device Simulation
Sumiko OSHIDA, Masao TAGUCHI, |
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Vol.E76-C No.11
pp.1611-1619
Special SectionPAPER
SRAM
Noise Reduction Techniques for a 64-kb ECL-CMOS SRAM with a 2-ns Cycle Time
Kenichi OHHATA, Yoshiaki SAKURAI, Hiroaki NAMBU, Kazuo KANETANI, Youji IDEI, Toshirou HIRAMOTO, Nobuo TAMBA, Kunihiko YAMAGUCHI, Masanori ODAKA, Kunihiko WATANABE, Takahide IKEDA, Noriyuki HOMMA, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.11
pp.1620-1625
Special SectionPAPER
SRAM
An Effective Defect-Repair Scheme for a High Speed SRAM
Sadayuki OOKUMA, Katsuyuki SATO, Akira IDE, Hideyuki AOKI, Takashi AKIOKA, Hideaki UCHIDA, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.11
pp.1626-1631
Special SectionPAPER
Non-volatile Memory
Statistical Memory Yield Analysis and Redundancy Design Considering Fabrication Line Improvement
Ken-ichi IMAMIYA, Jun-ichi MIYAMOTO, Nobuaki OHTSUKA, Naoto TOMITA, Yumiko IYAMA, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.11
pp.1632-1640
Special SectionPAPER
Application Specific Memory
Circuit and Functional Design Technologies for 2 Mb VRAM
Katsuyuki SATO, Masahiro OGATA, Miki MATSUMOTO, Ryouta HAMAMOTO, Kiichi MANITA, Terutaka OKADA, Yuji SAKAI, Kanji OISHI, Masahiro YAMAMURA, |
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Vol.E76-C No.11
pp.1641-1648
Special SectionPAPER
Application Specific Memory
High-Performance Memory Macrocells with Row and Column Sliceable Architecture
Nobutaro SHIBATA, Yoshinori GOTOH, Shigeru DATE, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.11
pp.1649-1656
Special SectionPAPER
Application Specific Memory
A High-Density Multiple-Valued Content-Addressable Memory Based on One Transistor Cell
Satoshi ARAGAKI, Takahiro HANYU, Tatsuo HIGUCHI, |
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Summary | Full Text:PDF | |
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Vol.E76-C No.11
pp.1657-1664
Special SectionPAPER
Application Specific Memory
A Bitline Control Circuit Scheme and Redundancy Technique for High-Density Dynamic Content Addressable Memories
Tadato YAMAGATA, Masaaki MIHARA, Takeshi HAMAMOTO, Yasumitsu MURAI, Toshifumi KOBAYASHI, Michihiro YAMADA, Hideyuki OZAKI, |
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Summary | Full Text:PDF | |
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