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Vol.E78-C No.9
pp.1223-1228
Special SectionPAPER
An Accurate FET Model for Microwave Nonlinear Circuit Simulation
Junko ONOMURA, Shigeru WATANABE, Susumu KAMIHASHI, |
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Vol.E78-C No.9
pp.1229-1236
Special SectionPAPER
Direct Efficiency and Power Calculation Method and Its Application to Low Voltage High Efficiency Power Amplifier
Kazutomi MORI, Masatoshi NAKAYAMA, Yasushi ITOH, Satoshi MURAKAMI, Yasuharu NAKAJIMA, Tadashi TAKAGI, Yasuo MITSUI, |
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Vol.E78-C No.9
pp.1237-1240
Special SectionPAPER
A High Efficiency GaAs Power Amplifier of 4.6 V Operation for 1.5 GHz Digital Cellular Phone Systems
Akihisa SUGIMURA, Kazuki TATEOKA, Hidetoshi FURUKAWA, Kunihiko KANAZAWA, |
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Vol.E78-C No.9
pp.1241-1245
Special SectionPAPER
Power Heterojunction FETs for Low-Voltage Digital Cellular Applications
Keiko INOSAKO, Naotaka IWATA, Masaaki KUZUHARA, |
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Vol.E78-C No.9
pp.1246-1251
Special SectionPAPER
A Low-Voltage GaAs One-Chip Oscillator IC for Laser-Diode Noise Suppression
Tsuyoshi TANAKA, Hideo NAGAI, Daisuke UEDA, |
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Vol.E78-C No.9
pp.1252-1254
Special SectionLETTER
A Wideband Monolithic Lossy Match Power Amplifier Having an LPF/HPF-Combined Interstage Network
Mitsuru MOCHIZUKI, Yasushi ITOH, Masatoshi NII, Tadashi TAKAGI, Yasuo MITSUI, |
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Vol.E78-C No.9
pp.1255-1262
PAPER
Integrated Electronics
Design of the Basic Cell and Metallized RAM for 0.5 µm CMOS Gate Array
Yoji NISHIO, Hideo HARA, Masahiro IWAMURA, Yasuo KAMINAGA, Katsunori KOIKE, Kosaku HIROSE, Takayuki NOTO, Satoshi OGUCHI, Yoshihiko YAMAMOTO, Takeshi ONO, |
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Vol.E78-C No.9
pp.1263-1272
PAPER
Integrated Electronics
Evaluation of Fixed Charge and Interface Trap Densities in SIMOX Wafers and Their Effects on Device Characteristics
Shoichi MASUI, Tatsuo NAKAJIMA, Keisuke KAWAMURA, Takayuki YANO, Isao HAMAGUCHI, Masaharu TACHIMORI, |
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Vol.E78-C No.9
pp.1273-1278
PAPER
Electronic Circuits
Acceleration Factor for Tarnish Testing of Silver Contact Surface
Terutaka TAMAI, Yasuhiro KURANAGA, |
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Vol.E78-C No.9
pp.1279-1285
PAPER
Semiconductor Materials and Devices
A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
Naohito YOSHIDA, Toshiaki KITANO, Yoshitsugu YAMAMOTO, Takayuki KATOH, Hiroyuki MINAMI, Takuo KASHIWA, Takuji SONODA, Hirozo TAKANO, Osamu ISHIHARA, |
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